Effect of Ge doping on the material properties of sprayed Cu2SnS3 thin films
A facile spray pyrolysis processing of ternary Cu2SnS3 and Cu2Sn1−xGexS3 absorbers is presented. The Cu2SnS3 and Cu2Sn1−xGexS3 thin films were sprayed onto both glass and Mo substrates at 350 °C and then annealed at 550 °C with S and SnS/GeS crystals. The impacts of germanium incorporation on the pr...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Elsevier
2023-07-01
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| Edice: | Results in Optics |
| Témata: | |
| On-line přístup: | http://www.sciencedirect.com/science/article/pii/S2666950123001517 |
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