Thin-film InGaAs metamorphic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform

The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with outstanding optical properties, typically emitting at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift this emission to the technologically attractive telecom C-band range center...

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Detalhes bibliográficos

Principais autores:	Sittig Robert, Nawrath Cornelius, Kolatschek Sascha, Bauer Stephanie, Schaber Richard, Huang Jiasheng, Vijayan Ponraj, Pruy Pascal, Portalupi Simone Luca, Jetter Michael, Michler Peter
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2022-02-01
coleção:	Nanophotonics
Assuntos:	1550 nm metamorphic buffer optical resonators quantum dots
Acesso em linha:	https://doi.org/10.1515/nanoph-2021-0552
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