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Multilayer redox-based HfOx/Al2O3/TiO2 memristive structures for neuromorphic computing

Abstract Redox-based memristive devices have shown great potential for application in neuromorphic computing systems. However, the demands on the device characteristics depend on the implemented computational scheme and unifying the desired properties in one stable device is still challenging. Under...

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Autors principals: Seongae Park, Benjamin Spetzler, Tzvetan Ivanov, Martin Ziegler
Format: Artigo
Idioma:Inglês
Publicat: Nature Portfolio 2022-10-01
Col·lecció:Scientific Reports
Accés en línia:https://doi.org/10.1038/s41598-022-22907-5
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