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Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode

Abstract Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next‐generation high‐power devices. In this study, the fabrication of a high‐pe...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Haris Naeem Abbasi, Moheb Sheikhi, Donghyeok Kim, Ranveer Singh, Jiarui Gong, Jie Zhou, Qiming Zhang, Shuoyang Qiu, Carolina Adamo, Patrick Marshall, Clincy Cheung, Vincent Gambin, Zhenqiang Ma
Format: Artigo
Sprache:Inglês
Veröffentlicht: Wiley-VCH 2025-02-01
Schriftenreihe:Advanced Materials Interfaces
Schlagworte:
AlGaAs/GaAsP
diodes
epitaxial lift‐off
heterojunctions
kelvin probe force microscopy
nanomembranes
Online-Zugang:https://doi.org/10.1002/admi.202400588
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