Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates
The first part of this work evaluates Al-doped ZnO (AZO) as an optically transparent top-gate material for studies on semiconductor quantum dots. In comparison with conventional Ti gates, samples with AZO gates demonstrate a more than three times higher intensity in the quantum dot emission under co...
Zapisane w:
| Główni autorzy: | , , , , |
|---|---|
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
MDPI AG
2024-10-01
|
| Seria: | Nanomaterials |
| Hasła przedmiotowe: | |
| Dostęp online: | https://www.mdpi.com/2079-4991/14/21/1712 |
| Etykiety: |
Nie ma etykietki, Dołącz pierwszą etykiete!
|