Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N2 working gas with a small amount of A...
Guardat en:
| Autors principals: | , , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2018-04-01
|
| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | http://www.mdpi.com/2079-4991/8/4/223 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|