Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO₂) Devices via Sol-Gel Method Stacking Tri-Layer HfO₂/Al-ZnO/HfO₂ Structures

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be...

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Hauptverfasser:	Yuan-Dong Xu, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Zhenhua Tang, Wen-Hua Li, Xiao-Bin Guo, Yi-Chun Zhou
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2022-12-01
Schriftenreihe:	Nanomaterials
Schlagworte:	HfO<sub>2</sub> Al-ZnO sol–gel method resistive switching multi-level memory conductive filament
Online-Zugang:	https://www.mdpi.com/2079-4991/13/1/39
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