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Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation

Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and chemical analysis results...

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Principais autores: Georgiana Bulai, Oana Pompilian, Silviu Gurlui, Petr Nemec, Virginie Nazabal, Nicanor Cimpoesu, Bertrand Chazallon, Cristian Focsa
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2019-05-01
Serier:Nanomaterials
Fag:
pulsed laser deposition
chalcogenide thin films
Raman spectroscopy
spectroscopic ellipsometry
Online adgang:https://www.mdpi.com/2079-4991/9/5/676
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