The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide

We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH₄ in H₂ at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase deposition times of 3, 5, 20,...

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Detalhes bibliográficos

Principais autores:	Teodor Milenov, Vladimir Mehandzhiev, Peter Rafailov, Ivalina Avramova, Ivan Zahariev, Georgi Avdeev, Daniela Karashanova, Biliana Georgieva, Penka Terziyska, Kiril Kirilov, Blagoy Blagoev, Stefan Kolev, Dimitar Dimov, Dobromir Kalchevski, Desislava Karaivanova, Valentin Popov
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2025-06-01
coleção:	Applied Sciences
Assuntos:	silicon carbide chemical vapor deposition X-ray diffraction X-ray photoelectron spectroscopy transmission electron microscopy
Acesso em linha:	https://www.mdpi.com/2076-3417/15/13/7078
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