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Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle

Abstract Valley Hall effect is observed in asymmetric single‐layer and bilayer graphene systems. In single‐layer graphene systems, asymmetry is introduced by aligning graphene with hexagonal boron nitride (hBN) with a near‐zero twist angle, breaking the sub‐lattice symmetry. Although a similar appro...

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Detalhes bibliográficos
Principais autores: Teppei Shintaku, Afsal Kareekunnan, Masashi Akabori, Kenji Watanabe, Takashi Taniguchi, Hiroshi Mizuta
Formato: Artigo
Idioma:Inglês
Publicado em: Wiley-VCH 2024-01-01
coleção:Advanced Physics Research
Assuntos:
Acesso em linha:https://doi.org/10.1002/apxr.202300064
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