Power-Law Time Exponent <i>n</i> and Time-to-Failure in 4H-SiC MOSFETs: Beyond Fixed Reaction–Diffusion Theory

This work investigates bias-temperature instability (BTI) in 1700 V 4H-SiC MOSFETs under realistic 1 MHz switching conditions with simultaneous gate and drain stress. Threshold-voltage measurements reveal that the degradation does not follow the classical Reaction–Diffusion behavior typically assume...

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主要な著者:	Mamta Dhyani, Smriti Singh, Nir Tzhayek, Joseph B. Bernstein
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2025-11-01
シリーズ:	Micromachines
主題:	silicon carbide MOSFETs threshold voltage instability power-law trap physics negative activation energy Arrhenius analysis
オンライン･アクセス:	https://www.mdpi.com/2072-666X/16/12/1351
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