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Non-destructive thickness measurement of Si wafers via optical third-harmonic generation with femtosecond laser pulses

Si wafers are vital substrate materials in semiconductor manufacturing and require precise non-destructive thickness measurements. However, the conventional electrical and optical measurement techniques are limited by depth selectivity and system complexity. Here, we propose a simple, high-precision...

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Autori principali: In Jae Lee, Dae Hee Kim, Jiwon Hahm, Hongki Yoo, Seung-Woo Kim, Young-Jin Kim
Natura: Artigo
Lingua:Inglês
Pubblicazione: Elsevier 2024-12-01
Serie:Results in Optics
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Accesso online:http://www.sciencedirect.com/science/article/pii/S2666950124001524
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