Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate

Abstract This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV are employed to manipulate charge transport in mono...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Zahra Fekri, Phanish Chava, Gregor Hlawacek, Mahdi Ghorbani‐Asl, Silvan Kretschmer, Wajid Awan, Vivek Mootheri, Tommaso Venanzi, Natalia Sycheva, Antony George, Andrey Turchanin, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Arkady V. Krasheninnikov, Artur Erbe
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2024-09-01
Sarja:	Advanced Electronic Materials
Aiheet:	defects FET first‐principles calculations ion irradiation monolayer MoS2
Linkit:	https://doi.org/10.1002/aelm.202400037
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