A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of the solutions to increase a light output power. To...

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Autors principals:	Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2023-03-01
Col·lecció:	Crystals
Matèries:	AlGaN tunnel junction light-emitting diode deep-ultraviolet MgZnO
Accés en línia:	https://www.mdpi.com/2073-4352/13/3/524
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