On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Featured with light emission and detection coexistence phenomenon, nitride-based multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, m...

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Opis bibliograficzny

Główni autorzy:	Feifei Qin, Xueyao Lu, Xiaoxuan Wang, Chunxiang Guo, Jiaqi Wu, Xuefeng Fan, Mingming Jiang, Peng Wan, Junfeng Lu, Yongjin Wang, Gangyi Zhu
Format:	Artigo
Język:	Inglês
Wydane:	Elsevier 2024-12-01
Seria:	Chip
Hasła przedmiotowe:	Three-dimensional device Self-warped structures Single cantilever GaN light-emitting diode Directional emission and detection
Dostęp online:	http://www.sciencedirect.com/science/article/pii/S2709472324000339
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