A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap semiconductors has already achieved preli...

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Detalhes bibliográficos

Principais autores:	Qiwei Shangguan, Yawei Lv, Changzhong Jiang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2024-10-01
coleção:	Nanomaterials
Assuntos:	a-IGZO 4H-SiC defects charge transition levels formation energy stability
Acesso em linha:	https://www.mdpi.com/2079-4991/14/20/1679
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