Editorial for the Special Issue on Magnetic and Spin Devices, Volume II
Although the miniaturization of metal–oxide–semiconductor field effect transistors (MOSFETs)—the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits—is continuing, numerous outstanding technological challenges in complimentary m...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2023-11-01
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| Col·lecció: | Micromachines |
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| Accés en línia: | https://www.mdpi.com/2072-666X/14/11/2131 |
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