Computational phonon dispersions structural and thermodynamical characteristics of novel C-based XC (X = Si, Ge and Sn) materials

A realistic rigid-ion-model (RIM) is adopted here to report the results of systematic calculations for comprehending the phonon dispersionsωjq→, structural, and thermodynamic traits of novel zinc-blende group-IV binary XC (X = Si, Ge, and Sn) materials. At ambient pressure, our study of ωjq→ has off...

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Detaylı Bibliyografya
Yazar:	Devki N. Talwar
Materyal Türü:	Artigo
Dil:	Inglês
Baskı/Yayın Bilgisi:	Elsevier 2024-07-01
Seri Bilgileri:	Next Materials
Konular:	C-based XC (X = Si, Ge, Sn) materials Phonon dispersions Debye temperature, ΘD(T) Specific heat, Cv(T) Born’s transverse effective charge, eT*
Online Erişim:	http://www.sciencedirect.com/science/article/pii/S2949822824000959
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Computational phonon dispersions structural and thermodynamical characteristics of novel C-based XC (X = Si, Ge and Sn) materials

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