New Compact Electron Cyclotron Resonance Plasma Source for Silicon Nitride Film Formation in Minimal Fab System

A compact magnetic-mirror confined electron cyclotron resonance plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron complementary metal-oxide semiconductor device processes in the minim...

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Autors principals:	Tetsuya Goto, Kei-Ichiro Sato, Yuki Yabuta, Shigetoshi Sugawa, Shiro Hara
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2018-01-01
Col·lecció:	IEEE Journal of the Electron Devices Society
Matèries:	Minimal fab system silicon nitride plasma damage
Accés en línia:	https://ieeexplore.ieee.org/document/8107492/
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