Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)
We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up in the substrate by focused ion beam patterning fo...
Tallennettuna:
| Päätekijät: | , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Beilstein-Institut
2014-12-01
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| Sarja: | Beilstein Journal of Nanotechnology |
| Aiheet: | |
| Linkit: | https://doi.org/10.3762/bjnano.5.259 |
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