In-doped Sb nanowires grown by MOCVD for high speed phase change memories
We investigated the Phase Change Memory (PCM) capabilities of In-doped Sb nanowires (NWs) with diameters of (20-40) nm, which were self-assembled by Metalorganic Chemical Vapor Deposition (MOCVD) via the vapor-liquid-solid (VLS) mechanism. The PCM behavior of the NWs was proved, and it was shown to...
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| Principais autores: | , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Elsevier
2019-03-01
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| coleção: | Micro and Nano Engineering |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S259000721830011X |
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