Thermal Effects on Domain Wall Stability at Magnetic Stepped Nanowire for Nanodevices Storage

In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal s...

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Auteurs principaux:	Mohammed Al Bahri, Salim Al-Kamiyani
Format:	Artigo
Langue:	Inglês
Publié:	MDPI AG 2024-07-01
Collection:	Nanomaterials
Sujets:	micromagnetic simulation DW thermal stability magnetic domain wall stepped magnetic nanowire spin transfer torque
Accès en ligne:	https://www.mdpi.com/2079-4991/14/14/1202
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