Modelling of High Quantum Efficiency Avalanche Photodiode
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and qu...
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| Główni autorzy: | , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Iran University of Science and Technology
2019-12-01
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| Seria: | Iranian Journal of Electrical and Electronic Engineering |
| Hasła przedmiotowe: | |
| Dostęp online: | http://ijeee.iust.ac.ir/article-1-1295-en.html |
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