Physics-Based Analytical Channel Charge Model of In<italic>_x</italic>Ga_{1-<italic>x</italic>}As/In_0.52Al_0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

This paper presents a physics-based analytical channel charge model for indium-rich In_{<italic>x</italic>}Ga_{1-<italic>x</italic>}As/In_0.52Al_0.48As quantum-well (QW) field-effect transistors (FETs) that is applicable from the subthreshold to strong inversion r...

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Detalhes bibliográficos

Principais autores:	Hyeon-Seok Jeong, Wan-Soo Park, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Sung-Ho Hahm, Jae-Hak Lee, Dae-Hyun Kim
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2022-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	In<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">x</italic>Ga1-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">x</italic>As/In0.52Al0.48As QW FETs two-dimensional electron-gate density (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">n</italic>₂-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">DEG</italic>) subthreshold regime inversion regime near-threshold regime
Acesso em linha:	https://ieeexplore.ieee.org/document/9770423/
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