Self-Clamping Programming in Narrow-Bridge Floating Gate Cells for Multi-Level Logic Non-Volatile Memory Applications
A new self-converging programming characteristic in a single-poly floating-gate memory cell with full-compatibility to a CMOS logic technology is observed and studied. A uniquely design cell with a narrow-bridging line between two coupling capacitors promotes a localized charging effect at the elect...
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| Auteurs principaux: | , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
IEEE
2020-01-01
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| Collection: | IEEE Journal of the Electron Devices Society |
| Sujets: | |
| Accès en ligne: | https://ieeexplore.ieee.org/document/9129830/ |
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