The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes
In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature. The electrical parameters: barrier height, ideality factor, shunt resistance series, and resistance have been calculated using different me...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
University of El Oued
2020-12-01
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| coleção: | International Journal of Energetica |
| Acesso em linha: | https://www.ijeca.info/index.php/IJECA/article/view/137 |
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