Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Abstract A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than...

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Hlavní autoři:	Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, Yi-Ting Tseng, Ting-Chang Chang, Kuan-Chang Chang, Ming-Hui Wang, Wen-Chung Chen, Hao-Xuan Zheng, Huaqiang Wu, He Qian, Simon M. Sze
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	SpringerOpen 2017-10-01
Edice:	Nanoscale Research Letters
Témata:	HfO2-based RRAM Nitridation Endurance Space charge limit current
On-line přístup:	http://link.springer.com/article/10.1186/s11671-017-2330-3
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