Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Abstract Amorphous In–Ga–Zn-O (a-IGZO) thin-film transistor (TFT) memories are attracting many interests for future system-on-panel applications; however, they usually exhibit a poor erasing efficiency. In this article, we investigate voltage-polarity-dependent programming behaviors of an a-IGZO TFT...

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Autors principals:	Dan-Dan Liu, Wen-Jun Liu, Jun-Xiang Pei, Lin-Yan Xie, Jingyong Huo, Xiaohan Wu, Shi-Jin Ding
Format:	Artigo
Idioma:	Inglês
Publicat:	SpringerOpen 2019-12-01
Col·lecció:	Nanoscale Research Letters
Matèries:	ZnO In–Ga–Zn–O Nonvolatile memory Thin-film transistor (TFT) Oxygen vacancy
Accés en línia:	https://doi.org/10.1186/s11671-019-3204-7
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