Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma
The realization of vertical GaN devices requires deep plasma etching and is contingent on high mask selectivity. In this work, we show that SiO2 can be an effective mask material for deep etching GaN with GaN:SiO2 selectivities greater than 40—higher than the conventionally reported 15 for metal har...
Gorde:
| Egile Nagusiak: | , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Taylor & Francis Group
2021-02-01
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| Saila: | Materials Research Letters |
| Gaiak: | |
| Sarrera elektronikoa: | http://dx.doi.org/10.1080/21663831.2020.1847735 |
| Etiketak: |
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