Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time
Abstract The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unpreceden...
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| Автори: | , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley-VCH
2023-06-01
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| Серія: | Advanced Electronic Materials |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/aelm.202201104 |
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