Ambient Confined-Space Annealing for Crystallization Enhancement and Defect Passivation in Sb2S3 Thin-Film Solar Cells

Highlights Effectively inhibits the re-volatilization of Sb2S3, allowing recrystallization at 450 °C, and preparing films with large grains. The confined-space annealing strategy enables controlled dynamic in situ oxidation targeting defect sites and reduces the defect concentration of the VS by 60....

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Auteurs principaux:	Li-Mei Lin, Jie Huang, Hu Li, Jin-Rui Cai, Shui-Yuan Chen, Jian-Min Li, Xiao-Min Wang, Gui-Lin Chen
Format:	Artigo
Langue:	Inglês
Publié:	SpringerOpen 2026-05-01
Collection:	Nano-Micro Letters
Sujets:	Sb2S3 Confined-space annealing Crystal growth Passivation Sb2O3
Accès en ligne:	https://doi.org/10.1007/s40820-026-02193-w
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