Trap-assisted monolayer ReSe2/Si heterojunction with high photoconductive gain and self-driven broadband photodetector.
The development of photodetectors is crucial in fields such as optical communication, image sensing, medical devices and military equipment, where high sensitivity is paramount. We fabricated an ambipolar photodiode using monolayer triclinic ReSe2, synthesized by chemical vapor deposition on p-type...
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| Principais autores: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Frontiers Media S.A.
2024-02-01
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| coleção: | Frontiers in Materials |
| Assuntos: | |
| Acesso em linha: | https://www.frontiersin.org/articles/10.3389/fmats.2024.1354522/full |
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