Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)
Research on enhancement green light emitter is important to obtain a perfect red-green-blue (RGB) induced white light source. Unfortunately the present of mixed phase in deposition of InGaN/GaN limited the potential LED efficiency. Therefore, we introduce a new method called as Low Temperature Ammon...
Furkejuvvon:
| Váldodahkkit: | , , , , , , |
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| Materiálatiipa: | Artigo |
| Giella: | Inglês |
| Almmustuhtton: |
MDPI AG
2022-09-01
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| Ráidu: | Photonics |
| Fáttát: | |
| Liŋkkat: | https://www.mdpi.com/2304-6732/9/9/646 |
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