Optical Power Monitoring with Ultrahigh Sensitivity in Silicon Waveguides and Ring Resonators
We demonstrate optical power monitoring using a silicon resistor enabled by the surface and defect states-induced photoconductance effect. Ultrahigh optical power detection sensitivity of −40 dBm under a low AC drive voltage of 5 mV is obtained with the facilitation of a lock-in amplifier cir...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2017-01-01
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| Edice: | IEEE Photonics Journal |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/7982749/ |
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