Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires
The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young’s modulus and the linear coefficient of thermal expansion through se...
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| Главные авторы: | , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Beilstein-Institut
2015-10-01
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| Серии: | Beilstein Journal of Nanotechnology |
| Предметы: | |
| Online-ссылка: | https://doi.org/10.3762/bjnano.6.201 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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