High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic
Ceramic materials are high-temperature resistant materials with promising prospects. In some applications, semiconductor devices need to be integrated with a ceramic substrate. Herein, we report on the stable operation of an Al<sub>2</sub>O<sub>3</sub> ceramic-based amorphous-Indium gallium zinc oxi...
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| Principais autores: | , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2019-01-01
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| Serier: | IEEE Access |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/8937545/ |
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