Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET
Line-edge-roughness (LER) is one of undesirable process-induced random variation sources. LER is mostly occurred in the process of photo-lithography and etching, and it provokes random variation in performance of transistors such as metal oxide semiconductor field effect transistor (MOSFET), fin-sha...
Na minha lista:
| Principais autores: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2021-01-01
|
| coleção: | IEEE Access |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9452104/ |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|