Electrophysical Properties of Ge/Cr Thin Films
Electrophysical properties of the two-layer film systems based on Ge and Cr as two-layer film a-Ge/Cr/S or over Ge/Cr/S are studied. It is found that at a limited thickness of dGe ≈ 10-15 nm there is an inversion of sign value of ΔR/R = [R(Ge/Cr) – R(Cr)]/R(Cr) from ΔR/R < 0 (for dGe ≈ 10-15 nm) to...
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| Autores principales: | , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sumy State University
2011-01-01
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| Colección: | Журнал нано- та електронної фізики |
| Materias: | |
| Acceso en línea: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_232-235.pdf |
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