Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO<sub>3</sub>/Al/SrZrTiO<sub>3</sub>/ITO with Embedded Al Layer
The SrZrTiO<sub>3</sub> (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI AG
2022-12-01
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| Σειρά: | Nanomaterials |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/2079-4991/12/24/4412 |
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