On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodes
Theories of spontaneous emission rates and carrier recombination mechanisms for multiple-quantum-well InGaN-based blue light-emitting diodes (LEDs) have been carefully studied. A relationship among the optical power, the current density, and the temperature (heat-sink temperature or p-n junction tem...
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| 主要な著者: | , , , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
AIP Publishing LLC
2017-01-01
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| シリーズ: | AIP Advances |
| オンライン･アクセス: | http://dx.doi.org/10.1063/1.4974877 |
| タグ: |
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