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Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer fr...

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Gardado en:
Principais autores: Bahram Nabet, Fabio Quaranta, Adriano Cola, Anna Persano, Maria Concetta Martucci, Pouya Dianat, Marc Currie
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2013-02-01
Series:Sensors
Assuntos:
photodetector
photodiode
GaAs
low-temperature grown GaAs
electro-optic sampling
ultrafast detector
heterojunction
Schottky contact
Acceso en liña:http://www.mdpi.com/1424-8220/13/2/2475
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