Dry etch performance of Novolak-based negative e-beam resist
Electron beam lithography (EBL) is pivotal for micro- and nanoscale fabrication, offering sub-micron precision. This study explores the utilization of the Novolac-based negative resist AR-N 7520 for EBL and its potential as an etch mask for reactive ion etching (RIE) of silicon. Recent comparisons o...
Gorde:
| Egile Nagusiak: | , , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Elsevier
2024-12-01
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| Saila: | Micro and Nano Engineering |
| Gaiak: | |
| Sarrera elektronikoa: | http://www.sciencedirect.com/science/article/pii/S2590007224000479 |
| Etiketak: |
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