Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection
Abstract 2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe2, having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
SpringerOpen
2020-05-01
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| Edice: | Nanoscale Research Letters |
| Témata: | |
| On-line přístup: | http://link.springer.com/article/10.1186/s11671-020-03342-9 |
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