A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors
In this study, VO2 Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2 Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 dis...
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| Главные авторы: | , , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
IEEE
2025-01-01
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| Серии: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Предметы: | |
| Online-ссылка: | https://ieeexplore.ieee.org/document/11015876/ |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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