Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement

Abstract We reported transport diagrams of self-assembled germanium (Ge) double quantum-dots (DQDs) using direct current measurement under illumination at wavelength (λ) of 850 nm and at the base temperature of 4.5 K. Ge DQDs with a coupling-barrier of Si, tunneling-barriers of Si3N4, and self-align...

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Detalhes bibliográficos

Principais autores:	I-Hsiang Wang, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Nature Portfolio 2024-09-01
coleção:	Scientific Reports
Assuntos:	Ge quantum dot Transport diagram Photon assisted tunneling
Acesso em linha:	https://doi.org/10.1038/s41598-024-71177-w
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