Crystallinity Effect on Electrical Properties of PEALD–HfO₂ Thin Films Prepared by Different Substrate Temperatures

Hafnium oxide (HfO₂) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO₂ films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The...

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Detalles Bibliográficos

Principais autores:	Xiao-Ying Zhang, Jing Han, Duan-Chen Peng, Yu-Jiao Ruan, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2022-11-01
Series:	Nanomaterials
Assuntos:	HfO<sub>2</sub> films crystalline behavior electrical properties substrate temperature
Acceso en liña:	https://www.mdpi.com/2079-4991/12/21/3890
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