Simple modelling of S‐type NbOx locally active memristor
Abstract Nanoscale S‐type NbOx locally active memristors (LAMs) open up new opportunities in the brain‐inspired neuromorphic computing. Simple yet accurate models for these memristors can provide benefits for designing related circuits and systems. Considering that the DC voltage–current plot of the...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2021-08-01
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| Col·lecció: | Electronics Letters |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1049/ell2.12207 |
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