CHARACTERIZATION OF NITROGENATED GALLIUM PHOSPHIDE FILMS
GaPN thin films were deposited on Silicon (100) substrates, in the range of 420-520 oC by r-f magnetron sputtering employing a nitrogen–argon atmosphere. According to X-ray measurements the GaPN films are polycrystalline with preferential orientation along of (111) direction. High resolution scannin...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Universidad Nacional de Colombia
2012-07-01
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| coleção: | Momento |
| Assuntos: | |
| Acesso em linha: | https://revistas.unal.edu.co/index.php/momento/article/view/40386 |
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