Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory
Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM). However, STT-MRAM faces challenges due to process variations and thermal fluctuations, resulting in independent errors during the writing and r...
Gorde:
| Egile Nagusiak: | , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IEEE
2023-01-01
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| Saila: | IEEE Access |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/10283818/ |
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