Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport propertie...

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Autores principales:	Sumin Choi, David J. Rogers, Eric V. Sandana, Philippe Bove, Ferechteh H. Teherani, Christian Nenstiel, Axel Hoffmann, Ryan McClintock, Manijeh Razeghi, David Look, Angus Gentle, Matthew R. Phillips, Cuong Ton-That
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Nature Portfolio 2017-08-01
Colección:	Scientific Reports
Acceso en línea:	https://doi.org/10.1038/s41598-017-07568-z
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